PART |
Description |
Maker |
AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM 2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM) 2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
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Alliance Semiconductor Corporation SEMICOA[Semicoa Semiconductor]
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AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM(带单片使能 2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
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Alliance Semiconductor Corporation Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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HY64UD16322A HY64UD16322A-DF70E HY64UD16322A-DF70I |
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM 200万16位低功T/1C伪静态存储器 Mobile PSRAM - 32Mb
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
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WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 x8 SRAM x8的SRAM 25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
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White Electronic Designs Microchip Technology, Inc. Sharp, Corp. Electronic Theatre Controls, Inc. Raltron Electronics, Corp.
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UT62L25616MC-55LI UT62L25616BS-55LI UT62L25616BS-5 |
256K X 16 BIT LOW POWER CMOS SRAM 256 × 16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
|
HY62LF16201ALLF-85 HY62LF16201ALLF-85I HY62LF16201 |
Super Low Power Slow SRAM - 2Mb x16 SRAM
|
Hynix Semiconductor
|
UT62L1024 UT62L1024SC-35L UT62L1024SC-35LL UT62L10 |
128K X 8 BIT LOW POWER CMOS SRAM 128K的8位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] UTRON Technology
|
UT62L12916 UT62L12916BS UT62L12916BS-100L UT62L129 |
128K X 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
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Electronic Theatre Controls, Inc. UTRON Technology ETC[ETC] List of Unclassifed Manufacturers
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HY62SF16201ALLF-85 HY62SF16201ASLF-85 HY62SF16201A |
Super Low Power Slow SRAM - 2Mb x16 SRAM
|
Hynix Semiconductor
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